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SBR5E60P5-13

Marking:S5E60;Package:POWERDI5;5A SBR® SUPER BARRIER RECTIFIER POWERDI®5

Features PatentedSuperBarrierRectifierSBR® technologyprovides superioravalanchecapabilityversusSchottkydiodes,ensuring moreruggedandreliableendapplications UltraLowForwardVoltageDrop(VF)HelpsMinimizePower Losses ExcellentReverseLeakage(IR)StabilityatHigherTemp

DIODESDiodes Incorporated

美台半导体

SBR5E60P5-13D

Marking:S5E60;Package:POWERDI5;5A SBR® SUPER BARRIER RECTIFIER POWERDI®5

Features PatentedSuperBarrierRectifierSBR® technologyprovides superioravalanchecapabilityversusSchottkydiodes,ensuring moreruggedandreliableendapplications UltraLowForwardVoltageDrop(VF)HelpsMinimizePower Losses ExcellentReverseLeakage(IR)StabilityatHigherTemp

DIODESDiodes Incorporated

美台半导体

SBR5E60P5-7

Marking:S5E60;Package:POWERDI5;5A SBR® SUPER BARRIER RECTIFIER POWERDI®5

Features PatentedSuperBarrierRectifierSBR® technologyprovides superioravalanchecapabilityversusSchottkydiodes,ensuring moreruggedandreliableendapplications UltraLowForwardVoltageDrop(VF)HelpsMinimizePower Losses ExcellentReverseLeakage(IR)StabilityatHigherTemp

DIODESDiodes Incorporated

美台半导体

SBR5E60P5-7D

Marking:S5E60;Package:POWERDI5;5A SBR® SUPER BARRIER RECTIFIER POWERDI®5

Features PatentedSuperBarrierRectifierSBR® technologyprovides superioravalanchecapabilityversusSchottkydiodes,ensuring moreruggedandreliableendapplications UltraLowForwardVoltageDrop(VF)HelpsMinimizePower Losses ExcellentReverseLeakage(IR)StabilityatHigherTemp

DIODESDiodes Incorporated

美台半导体

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