丝印：S52；Package：SOT-523F；PNP Epitaxial Silicon Transistor

文件：239.05 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：S5240Z；Package：SC-73；40 V, 2 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240Z Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capabilit

文件：717.69 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：S520F；Package：SMAF；Surface Mount Schottky Rectifiers

Features Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：3.08487 Mbytes 页数：3 Pages

RFE

RFE international

丝印：S52F；Package：SMAF；Surface Mount Schottky Rectifiers

Features Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：3.08487 Mbytes 页数：3 Pages

RFE

RFE international

丝印：S520B；Package：SMBF；SMD Schottky Barrier Rectifiers

Features - Metal silicon junction, majority carrier conduction. - For surface mounted applications. - Low power loss, high efficiency. - High forward surge current capability. - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.

文件：472.81 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：S520B；Package：SMBF；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.3595 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：S52B；Package：SMBF；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.3595 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：S52892；Package：VQFN-HR；TPS552892 36-V, 8-A, Fully Integrated Buck-boost Converter

1 Features • Wide input and output voltage range – Wide input voltage range: 3.0 V to 36 V – Programmable output voltage range: 0.8 V to 22 V – ±1 reference voltage accuracy – Adjustable output voltage compensation for voltage droop over the cable – ±5 accurate output current monitoring •

文件：3.0491 Mbytes 页数：37 Pages

TI

德州仪器

丝印：S520B；Package：SMBF；Surface Mount Schottky Barrier Rectifier

文件：403.15 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：S520B；Package：SMBF；Surface Mount Schottky Barrier Rectifier

文件：415.32 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司