Discrete SiC Schottky Diodes

SMC

桑德斯微电子

1200V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：1.34771 Mbytes 页数：9 Pages

SMCDIODE

桑德斯微电子

4th Generation 1200 V, 5 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.16566 Mbytes 页数：9 Pages

WOLFSPEED

Silicon Carbide Schottky Diode

文件：680.11 Kbytes 页数：6 Pages

Cree

科锐

Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Swtitching Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency •

文件：553.08 Kbytes 页数：5 Pages

Cree

科锐