SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 页数：12 Pages

TECCOR