N-channel SiC power MOSFET bare die

文件：669.76 Kbytes 页数：13 Pages

ROHM

罗姆

N-channel SiC（碳化硅）功率MOSFET bare die

S4003是SiC（碳化硅）功率MOSFET。其特征是高耐压、低导通电阻、高速开关。\n\n关于Bare Die的销售请向本公司销售部门咨询规格。现在尚未进行网络销售及经由网络公司进行销售。 • Low on-resistance\n• Fast switching speed\n• Fast reverse recovery\n• Easy to parallel\n• Simple to drive;

ROHM

罗姆

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETC1List of Unclassifed Manufacturers

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SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商