Package：DO-214AB，SMC；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 400V 3A DO214AB

Micro Commercial Co

Package：DO-214AB，SMC；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 400V 3A DO214AB

TSC

台湾半导体

Package：DO-214AB，SMC；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 400V 3A SMC

ONSEMI

安森美半导体

丝印：S3G04；Package：SSOP-8；TRIPLE INVERTER GATE

Features  Wide Supply Voltage Range from 1.65V to 5.5V  ±24mA Output Drive at 3.3V  CMOS Low Power Consumption  IOFF Supports Partial-Power-Down Mode Operation  Inputs Accept up to 5.5V  ESD Protection Tested per JESD 22 Exceeds 2,000V Human Body Model (A114) Exceeds 1,000V Charged D

文件：463.37 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：S3G06；Package：SSOP-8；TRIPLE INVERTER WITH OPEN DRAIN OUTPUTS

Features  Wide Supply Voltage Range from 1.65V to 5.5V  -24mA Output Drive at 3.3V  CMOS Low Power Consumption  IOFF Supports Partial-Power-Down Mode Operation  Inputs Accept up to 5.5V  ESD Protection Tested per JESD 22 Exceeds 2,000V Human Body Model (A114) Exceeds 1,000V Charged D

文件：546.02 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：S3G14；Package：SSOP-8；TRIPLE SCHMITT-TRIGGER INVERTER

Features  Wide Supply Voltage Range from 1.65V to 5.5V  ±24mA Output Drive at 3.3V  CMOS Low Power Consumption  IOFF Supports Partial-Power-Down Mode Operation  Inputs Accept up to 5.5V  ESD Protection Tested per JESD 22 Exceeds 2,000V Human Body Model (A114) Exceeds 1,000V Charged D

文件：575.92 Kbytes 页数：9 Pages

DIODES

美台半导体

丝印：S3G17；Package：SSOP-8；TRIPLE SCHMITT-TRIGGER BUFFER

Features  Wide Supply Voltage Range from 1.65V to 5.5V  ±24mA Output Drive at 3.3V  CMOS Low Power Consumption  IOFF Supports Partial-Power-Down Mode Operation  Inputs Accept up to 5.5V  ESD Protection Tested per JESD 22 Exceeds 2,000V Human Body Model (A114) Exceeds 1,000V Charged D

文件：626.04 Kbytes 页数：9 Pages

DIODES

美台半导体

丝印：S3G34；Package：SSOP-8；TRIPLE BUFFER GATE

Features  Wide Supply Voltage Range from 1.65V to 5.5V  ±24mA Output Drive at 3.3V  CMOS Low Power Consumption  IOFF Supports Partial-Power-Down Mode Operation  Inputs Accept up to 5.5V  ESD Protection Tested per JESD 22 Exceeds 2,000V Human Body Model (A114) Exceeds 1,000V Charged D

文件：470.83 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：S3GB；Package：SMB；Rectifiers, Surface Mount 3A, 50 V-1000 V

Features • Glass Passivated Chip Junction • High Surge Current Capacity • Low Forward Voltage: 1.15 V Maximum • UL Flammability 94V−0 Classification • MSL 1 per J−STD−020 • RoHS Compliant / Green Molding Compound • NRV Prefix for Automotive and Other Applications Requiring Unique Site and

文件：175.92 Kbytes 页数：5 Pages

ONSEMI

安森美半导体