SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features Chip design of 3rd generation Low forward voltage : VF = 1.2 V (typ.) Low total capacitive charge: Qc = 9nC (typ.) Low reverse current: IR = 0.4 μA (typ.)

文件：415.57 Kbytes 页数：7 Pages

TOSHIBA

东芝

丝印：S3E65H；Package：TO-220-2L；SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features Chip design of 3rd generation Low forward voltage : VF = 1.2 V (typ.) Low total capacitive charge: Qc = 9nC (typ.) Low reverse current: IR = 0.4 μA (typ.)

文件：415.57 Kbytes 页数：7 Pages

TOSHIBA

东芝

SiC Schottky Barrier Diode

FEATURES · High Surge Current Capability · Positive Temperature Coefficient · The Reverse Current is Small APPLICATIONS · Solar Inverter · Power Factor Correction · DC-DC Converters · Uninterruptible Power Supplies

文件：377.36 Kbytes 页数：2 Pages

ISC

无锡固电

SiC Schottky Barrier Diode

文件：254.8 Kbytes 页数：6 Pages

TOSHIBA

东芝

SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features Chip design of 3rd generation Low forward voltage : VF = 1.2 V (typ.) Low total capacitive charge: Qc = 9nC (typ.) Low reverse current: IR = 0.4 μA (typ.)

文件：415.57 Kbytes 页数：7 Pages

TOSHIBA

东芝