SiC Schottky Barrier Diode

FEATURES · High Surge Current Capability · Positive Temperature Coefficient · The Reverse Current is Small APPLICATIONS · Solar Inverter · Power Factor Correction · DC-DC Converters · Uninterruptible Power Supplies

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ISC

无锡固电

丝印：S3E65F；Package：TO-220-2L；SiC Schottky Barrier Diode

文件：254.8 Kbytes 页数：6 Pages

TOSHIBA

东芝

SiC Schottky barrier diode

Application Scope：Power factor correction / Solar inverters / Uninterruptible power supplies / DC-DC converters\nFeature：Chip design of 2nd generation.\nNumber of Circuits：1\nInternal Connection：Single\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Forward DC current IF(DC) 3 A \nRepetitive Peak Reverse Voltage VRRM 650 V ;

Toshiba

东芝

Package：TO-220-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：PB-F DIODE TO-220-2L V=650 IF=3A

Toshiba Semiconductor and Storage