650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin Pb − Free Device All SMC parts are traceable to the wafer l

文件：1.01836 Mbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin Pb − Free Device All SMC parts are traceable to the wafer l

文件：1.01836 Mbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

SiC Schottky Diode

Features Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telec

文件：2.37259 Mbytes 页数：8 Pages

BASICSEMI

基本半导体

SiC Schottky Diode

Features Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telec

文件：1.43034 Mbytes 页数：8 Pages

BASICSEMI

基本半导体

SiC Schottky Diode

Features Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge Ceramic package provides 2.5kV isolation Applications Switch mode power supplies (SMPS) Un

文件：1.40681 Mbytes 页数：8 Pages

BASICSEMI

基本半导体