丝印：B3D06065KS；Package：TO-220-isolated；SiC Schottky Diode

Features Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge Ceramic package provides 2.5kV isolation Applications Switch mode power supplies (SMPS) Un

文件：1.40681 Mbytes 页数：8 Pages

BASICSEMI

基本半导体

650V SiC Schottky Diode

BASiC

基本半导体

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：597.19 Kbytes 页数：6 Pages

Cree

科锐

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：291.41 Kbytes 页数：2 Pages

Cree

科锐

3rd Generation 650 V, 6 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.72012 Mbytes 页数：9 Pages

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