1200V SIC POWER MOSFET

• Positive temperature characteristics, easy to parallel. • Low on-resistance Typ. RDS(on) = 25mΩ . • Fast switching speed and low switching losses. • Very fast and robust intrinsic body diode. •“-A” is an AEC-Q101 qualified device. •The finish of terminals is pure matte Sn.

文件：3.9162 Mbytes 页数：10 Pages

SMCDIODE

桑德斯微电子

Discrete SiC MOSFETs

SMC

桑德斯微电子

1200V SIC POWER MOSFET

• Positive temperature characteristics, easy to parallel. • Low on-resistance Typ. RDS(on) = 25mΩ . • Fast switching speed and low switching losses. • Very fast and robust intrinsic body diode.

文件：2.61652 Mbytes 页数：10 Pages

SMCDIODE

桑德斯微电子

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件：346.87 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • I

文件：893.05 Kbytes 页数：11 Pages

WOLFSPEED

N-Channel Enhancement Mode

Silicon Carbide Power MOSFET C2M™ MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, Ro

文件：969.31 Kbytes 页数：10 Pages

Cree

科锐