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S2M0025120J

1200V SIC POWER MOSFET

•Positivetemperaturecharacteristics,easytoparallel. •Lowon-resistanceTyp.RDS(on)=25mΩ. •Fastswitchingspeedandlowswitchinglosses. •Veryfastandrobustintrinsicbodydiode. •Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微电子桑德斯微电子器件(南京)有限公司

S2M0025120JTR

1200V SIC POWER MOSFET

•Positivetemperaturecharacteristics,easytoparallel. •Lowon-resistanceTyp.RDS(on)=25mΩ. •Fastswitchingspeedandlowswitchinglosses. •Veryfastandrobustintrinsicbodydiode. •Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微电子桑德斯微电子器件(南京)有限公司

C2M0025120D

SiCN-ChannelMOSFET

FEATURES ·HighSpeedSwitchingwithLowCapacitances ·HighBlockingVoltagewithLowOn-Resistance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·High-voltageCapacitiveLoads ·Motordrives

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

C2M0025120D

SiliconCarbidePowerMOSFETC2MTMMOSFETTechnologyN-ChannelEnhancementMode

Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •I

WOLFSPEED

WOLFSPEED, INC.

C2M0025120D

N-ChannelEnhancementMode

SiliconCarbidePowerMOSFETC2M™MOSFETTechnology N-ChannelEnhancementMode Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •ResistanttoLatch-Up •HalogenFree,Ro

CreeCree, Inc

科锐

S2M0025120D

1200VSICPOWERMOSFET

•Positivetemperaturecharacteristics,easytoparallel. •Lowon-resistanceTyp.RDS(on)=25mΩ. •Fastswitchingspeedandlowswitchinglosses. •Veryfastandrobustintrinsicbodydiode. •Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微电子桑德斯微电子器件(南京)有限公司

S2M0025120K

1200VSICPOWERMOSFET

•Positivetemperaturecharacteristics,easytoparallel. •Lowon-resistanceTyp.RDS(on)=25mΩ. •Fastswitchingspeedandlowswitchinglosses. •Veryfastandrobustintrinsicbodydiode. •“-A”isanAEC-Q101qualifieddevice. •ThefinishofterminalsispurematteSn.

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微电子桑德斯微电子器件(南京)有限公司

S2M0025120N

1200VSICPOWERMOSFET

•Positivetemperaturecharacteristics,easytoparallel. •Lowon-resistanceTyp.RDS(on)=25mΩ. •Fastswitchingspeedandlowswitchinglosses. •Veryfastandrobustintrinsicbodydiode.

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微电子桑德斯微电子器件(南京)有限公司

供应商型号品牌批号封装库存备注价格
24+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
询价
JST/日压
22+
连接器
728922
代理-优势-原装-正品-现货*期货
询价
SAMTEC
20+
连接器
2963
就找我吧!--邀您体验愉快问购元件!
询价
SAMTEC
24+
con
35960
查现货到京北通宇商城
询价
Samtec
24+
连接器
1070
进口原装正品优势供应
询价
SAMTEC/申泰
23+
2021
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
Samtec
2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
询价
更多S2M0025120J供应商 更新时间2025-5-24 11:06:00