S20S60CR技术资料参数批发供应统懋MOSPEC-114ic电子网

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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
S20S60CR	文件：175.77 Kbytes Page：2 Pages	Schottky Barrier Rectifiers SCHOTTKYBARRIERRECTIFIERS 20AMPERES35-60VOLTS TheI2PAKPowerrectifieremploystheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artdeviceshavethefollowingfeatures: LowForwardVoltage. LowSwitchingnoise. *HighCurrentCapacity	MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司	MOSPEC
20S60FA	文件：280.28 Kbytes Page：2 Pages	20.0AmpereInsulatedDualCommonCathodeSuperFastRecoveryRectifiers	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司	THINKISEMI
20S60FA	文件：736.64 Kbytes Page：2 Pages	20.0AmpereInsulatedDualCommonCathodeUltraFastRecoveryRectifiers	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司	THINKISEMI
AOB20S60	文件：299.39 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) •100avalanchetested •MinimumLot-to-L	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOB20S60	文件：330.4 Kbytes Page：7 Pages	600V20AaMOSPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB20S60L	文件：330.39 Kbytes Page：7 Pages	600V20AaMOSTMPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB20S60L	文件：519.87 Kbytes Page：7 Pages	600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOK20S60	文件：325.78 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •WithTO-247packaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •PFCstages •Powersupply •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOK20S60	文件：256.839 Kbytes Page：6 Pages	600V20AaMOSPowerTransistor GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOK20S60L	文件：422.13 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) •100avalanchetested •MinimumLot-to-L	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

详细参数

型号：
S20S60CR
制造商：
MOSPEC
制造商全称：
Mospec Semiconductor
功能描述：
Schottky Barrier Rectifiers

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	S20S60CR	mospec	22+	TO-	6000	十年配单,只做原装	询价
深圳市创新迹电子有限公司	S20S60CR	mospec	22+	TO-	25000	只做原装进口现货,专注配单	询价
深圳市宏捷佳电子科技有限公司	S20S60CR	mospec	25+	TO-	35628	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市一线半导体有限公司	S20S60D	MOSPEC	24+	TO-263	8866		询价
贸泽芯城（深圳）电子科技有限公司	S20S90	MOSPEC	23+	TO-263	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价

更多S20S60CR供应商更新时间2025-5-18 14:00:00

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