Silicon Power Rectifier

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

文件：129.34 Kbytes 页数：2 Pages

MICROSEMI

美高森美

丝印：S21；Package：SOT-23_6L-1；20V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-4.5V, ID@-5A

文件：623.06 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：S21；Package：SOT-23_6L-1；20V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-4.5V, ID@-5A

文件：624.85 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：S21；Package：SOT-23；P-Channel Power MOSFET

文件：3.2916 Mbytes 页数：5 Pages

PJSEMI

平晶半导体

丝印：S21；Package：SOD-323；Silicon Epitaxial Planar Diode

文件：193.43 Kbytes 页数：3 Pages

BILIN

银河微电

丝印：S21；Package：SOT-23；P-Channel Elektronische Bauelemente Enhancement MOSFET

文件：223.88 Kbytes 页数：3 Pages

SECOS

喜可士

2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 50A Peak Low Power Loss Fast Switching Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

文件：52.71 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

SURFACE MOUNT S CHOTTKY BARRIER RECTIFIER

VOLTAGE - 20 to 100 Volts CURRENT - 2.0 Amperes FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● For surface mounted applications ● Low profile package ● Built-in strain relief ● Metal to silicon rectifier majority carrier conduction ● Low power los

文件：354.2 Kbytes 页数：2 Pages

GXELECTRONICS

星合电子

Zero-Volt Cross Switching

APPLICATIONS • Valve control • Solenoids • Home appliances • Metering equipment • Heating elements FEATURES • Zero-Volt Cross Switching • High Transient Immunity • 400V blocking voltage • 0.8A maximum continuous current • High input-to-output isolation • Solid state reliability

文件：243.97 Kbytes 页数：5 Pages

SOLIDSTATE

丝印：S210；Package：SOD-123FL；Surface Mount Schottky Rectifiers

Features Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：2.94785 Mbytes 页数：3 Pages

RFE

RFE international