20.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

文件：758.64 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

DUAL TRENCH MOS SCHOTTKY BARRIER RECTIFIER

文件：132.81 Kbytes 页数：3 Pages

UTC

友顺

20.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件：736.64 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

20.0 Ampere Insulated Dual Common Cathode Super Fast Recovery Rectifiers

文件：280.28 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.199Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

文件：299.39 Kbytes 页数：2 Pages

ISC

无锡固电