Embedded Arrays

• High-density integration (0.35 µm CMOS process technology and 3/4-layer interconnect process)\r\n• High-speed operation (Internal gate delay: 140 ps/3.3 V, 2-input power NAND Typ.)\r\n• Selectable supply voltage: Operation on a single power supply (2.0 V, 2.5 V, 3.3 V)\r\n• Operation on dual power;

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Embedded Arrays

• High-density integration (0.25 µm CMOS process technology and 3/4/5-layer interconnect process, number of raw gates: 2,500,000 Max.)\r\n• High-speed operation (Internal gate delay: 107 ps/2.5 V, 2-input power NAND Typ.)\r\n• Selectable supply voltage: Operation on a single power supply (2.0 V, 2.5;

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CMOS Gate Arrays

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