丝印：S16；Package：SOD-123FL；Surface Mount Schottky Rectifiers

Features Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：2.75269 Mbytes 页数：3 Pages

RFE

RFE international

丝印：S16；Package：SOD-123FL；Surface Mount Schottky Rectifier

文件：220.31 Kbytes 页数：4 Pages

YANGJIE

扬杰电子

Schottky Rectifier

■ Features ● Io 1.0A ● VRRM 20V~200V ● Low VF， Low power loss ● High surge forward current capability ■ Applications ● Rectifier

文件：105.25 Kbytes 页数：2 Pages

YANGJIE

扬杰电子

丝印：S16；Package：SOT-23-6L；20V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@4.5V, ID@7.4A

文件：368.06 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：S16；Package：SOT-23-6L；20V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@4.5V, ID@7.4A

文件：368.06 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：S16；Package：SOD-123F；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：309.3 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：S16；Package：SOD-123F；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：312.37 Kbytes 页数：6 Pages

RECTRON

丽正国际

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商