PJS6416_S1_00001

Marking：S16；Package：SOT-23-6L；20V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@4.5V,ID@7.4A

PJS6416_S2_00001

Marking：S16；Package：SOT-23-6L；20V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@4.5V,ID@7.4A

S16

Marking：S16；Package：SOD-123FL；Surface Mount Schottky Rectifiers

Features Lowprofilepackage Idealforautomatedplacement Guardringforovervoltageprotection Lowpowerlosses,highefficiency Highforwardsurgecapability MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

DS16W

Marking：S16；Package：SOD-123F；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

DS16W

Marking：S16；Package：SOD-123F；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

S16Q

Marking：S16；Package：SOD-123FL；Surface Mount Schottky Rectifier

GP1600SA

Marking：S1600A；Package：DO-214AC；STANDARD RECTIFIER

Features ·GlassPassivatedChip ·LowForwardVoltageDrop ·LowProfilepackage ·HighSurgeCurrentCapability ·Easypickandplace ·PlasticCaseMaterialhasULFlammability ClassificationRating94V-O

SN54SC8T164MPWTSEP

Marking：S164SEP；Package：TSSOP；SN54SC8T164-SEP Radiation Tolerant, 8-Bit Parallel-Out Serial Shift Registers

1Features •Vendoritemdrawingavailable,VID V62/25620-01XE •Radiation-TotalIonizingDose(TID): –TIDcharacterizedupto50krad(Si) –TIDperformanceassuranceupto30krad(Si) –RadiationLotAcceptanceTesting(RLAT)for everywaferlotupto30krad(Si) •Radiation-Single-Even

SN54SC8T165MPWTSEP

Marking：S165SEP；Package：TSSOP；SN54SC8T165-SEP Radiation Tolerant, Parallel-Load 8-Bit Shift Registers

1Features •Vendoritemdrawingavailable,VID V62/25625-01XE •Radiation-TotalIonizingDose(TID): –TIDcharacterizedupto50krad(Si) –TIDperformanceassuranceupto30krad(Si) –RadiationLotAcceptanceTesting(RLAT)for everywaferlotupto30krad(Si) •Radiation-Single-Even

CAT25160YI-GT3

Marking：S16D；Package：TSSOP-8；EEPROM Serial 8/16-Kb SPI