型号：MURS160；Package：SMA；Super-Fast Rectifiers

文件：336.55 Kbytes 页数：3 Pages

BILIN

银河微电

型号：MURS160；Package：SMA；Ultrafast power diode

文件：397.49 Kbytes 页数：10 Pages

WEEN

瑞能半导体

型号：GP1600SA；Package：DO-214AC；STANDARD RECTIFIER

Features · Glass Passivated Chip · Low Forward Voltage Drop · Low Profile package · High Surge Current Capability · Easy pick and place · Plastic Case Material has UL Flammability Classification Rating 94V-O

文件：412.02 Kbytes 页数：2 Pages

DAESAN

型号：MURS160F；Package：SMAF；Super-Fast Rectifiers

文件：232.97 Kbytes 页数：3 Pages

BILIN

银河微电

型号：S16008LK9；SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

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型号：S16008LK9LK7FB-75A；SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

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型号：S16008LK9LK7FB-8A；SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

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型号：S16008LK9LK7FC-75A；SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

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型号：S16008LK9LK7FC-8A；SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

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型号：S16008LK9LK7TW-75A；SYVCHRONOUS DRAM

[SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog

文件：361.73 Kbytes 页数：9 Pages

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