SB411D

SILICONEPITAXIALPLANARSCHOTTKYBARRIERDIODE

SILICONEPITAXIALPLANARSCHOTTKYBARRIERDIODE forlowpowerrectificationandswitchingpowersupply Features •Smallsurfacemountingtype. •Highreliability.

SC411

SynchronousBuckPseudo-FixedFrequencyPowerSupplyController

SC411EVB

SynchronousBuckPseudo-FixedFrequencyPowerSupplyController

SC411MLTRT

SynchronousBuckPseudo-FixedFrequencyPowerSupplyController

SCS411D

SurfaceMountSchottkyBarrierRectifiers

SCS411SDF

SmallSignalSchottkyBarrierDiode

SD411

N-ChannelEnhancementModeDualDMOSFET

DESCRIPTION TheSD411isconstructedutilizingCalogic’shighspeedlateralDMOStechniquesfeaturingtightmatchingcharacteristicsbetweeneachFET.Thisdeviceisanexcellentchoiceforinstrumentation,communication,RFandVideodesigns. FEATURES •NormallyOFFConfiguration •

SDP411D

BandswitchingDiode

Features •Extremelysmallsizepackage:1.7×1.2×0.9㎜Typ. •VHFtunerbandswitchapplications. •VeryLowseriesresistance:rS=Typ0.5Ω@IF=2mA •Lowtotalcapacitance:CT=1.2pF(Max.)

SDP411D

BandswitchingDiode

Features •Extremelysmallsizepackage:1.7×1.25×0.9㎜Typ. •VHFtunerbandswitchapplications. •VeryLowseriesresistance:rS=Typ0.5Ω@IF=2mA •Lowtotalcapacitance:CT=1.2pF(Max.)

SDP411Q

BandswitchingDiode

Features •Extremelysmallsizepackage:1.2×0.8×0.7㎜Typ. •VHFtunerbandswitchapplications. •VeryLowseriesresistance:rS=Typ0.5Ω@IF=2mA •Lowtotalcapacitance:CT=1.2pF(Max.)