N-Channel Enhancement Mode Dual DMOS FET

DESCRIPTION The SD411 is constructed utilizing Calogic’s high speed lateral DMOS techniques featuring tight matching characteristics between each FET. This device is an excellent choice for instrumentation, communication, RF and Video designs. FEATURES • Normally OFF Configuration •

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Calogic

N-Channel Enhancement Mode Dual DMOS FET

DESCRIPTION\nThe SD411 is constructed utilizing Calogic’s high speed lateral DMOS techniques featuring tight matching characteristics between each FET. This device is an excellent choice for instrumentation, communication, RF and Video designs.FEATURES\n• Normally \"OFF\" Configuration\n• High Speed • Normally \"OFF\" Configuration\n• High Speed Switching. . . . . . . . . . under 1 ns (typically)\n• Ultra Low Capacitance . . . . . . . . . ciss <3.5 pf (typically)\n• Tight Matching Characteristics\n• Pin Compatible to Industry Standard\n   Dual JFETs with Addition of Substrate Bias Pin;

Calogic

Band switching Diode

Features • Extremely small size package: 1.7× 1.2× 0.9 ㎜ Typ. • VHF tuner band switch applications. • Very Low series resistance : rS = Typ 0.5Ω @IF=2mA • Low total capacitance : CT = 1.2pF(Max.)

文件：283.52 Kbytes 页数：3 Pages

AUK

Band switching Diode

Features • Extremely small size package: 1.7×1.25×0.9 ㎜ Typ. • VHF tuner band switch applications. • Very Low series resistance : rS = Typ 0.5Ω@IF=2mA • Low total capacitance : CT = 1.2pF(Max.)

文件：349.24 Kbytes 页数：4 Pages

KODENSHI

可天士

Band switching Diode

Features • Extremely small size package: 1.2× 0.8× 0.7 ㎜ Typ. • VHF tuner band switch applications. • Very Low series resistance : rS = Typ 0.5Ω @IF=2mA • Low total capacitance : CT = 1.2pF(Max.)

文件：280.02 Kbytes 页数：3 Pages

AUK