丝印：TV；Package：TSMT3；SILICON P-CHANNEL MOS FET

Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). Application Power switching, DC / DC converter. Structure Silicon P-channel MOS FET

文件：787.17 Kbytes 页数：8 Pages

ROHM

罗姆

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：464.93 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF030P02N combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDSON .This device is ideal for load switch and battery protection applications. ● Features Advance high cell density Trench technology Low RDS(ON) to min

文件：3.86526 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

DC-DC Converter (-20V, -3.0A)

Features 1) Low on-resistance. (80mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) Applications DC-DC converter

文件：77.57 Kbytes 页数：5 Pages

ROHM

罗姆

P-Channel 20 V (D-S) MOSFET

文件：1.06029 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

DC-DC Converter (-20V, -3.0A)

文件：94.67 Kbytes 页数：5 Pages

ROHM

罗姆