Positive - Temperature - Coefficient Silicon Thermistors

SENSISTORS Positive - Temperature - Coefficient Silicon Thermistors DESCRIPTION The TG1/8 thermistor is encapsulated in a glass, hermetically sealed package. The TM1/8 and TM1/4 thermistors are encapsulated in a molded package. Both have hot solder0dipped leads and are used in temperature sensi

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MICROSEMI

美高森美

POSITIVE TEMPERATURE COEFFICIENT SILICON THERMISTORS

DESCRIPTION The TG1/8 thermistor is encapsulated in a glass, hermetically sealed package. The TM1/8 and TM1/4 thermistors are encapsulated in a molded package. Both have hot solder-dipped leads and are used in temperature sensing and compensation circuits.

文件：189.52 Kbytes 页数：4 Pages

MICROSEMI

美高森美

GaN Doherty Hybrid Amplifier

Description Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45, and powers 7W over the frequency range

文件：295.24 Kbytes 页数：7 Pages

RFHIC

GaN Doherty Hybrid Amplifier

文件：330.54 Kbytes 页数：7 Pages

RFHIC

GaN Doherty Hybrid Amplifier

文件：327.55 Kbytes 页数：7 Pages

RFHIC

GaN Doherty Hybrid Amplifier

文件：482.78 Kbytes 页数：4 Pages

RFHIC

GaN Doherty Hybrid Amplifier

文件：806.41 Kbytes 页数：8 Pages

RFHIC

GaN Doherty Hybrid Amplifier

文件：510.49 Kbytes 页数：7 Pages

RFHIC

GaN Doherty Hybrid Amplifier

文件：565.88 Kbytes 页数：4 Pages

RFHIC

GaN Doherty Hybrid Amplifier

文件：806.83 Kbytes 页数：8 Pages

RFHIC