GaN Doherty Hybrid Amplifier

文件：482.78 Kbytes 页数：4 Pages

RFHIC

Capacitive Sensor Switch Control IC

文件：698.67 Kbytes 页数：17 Pages

ROHM

罗姆

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET21008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21008 boasts the excellent

文件：40.83 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

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Microsemi

美高森美