丝印：DF=**；Package：WQFN-244x4；Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

文件：112.31 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：DF=**；Package：WQFN-244x4；Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

文件：89.47 Kbytes 页数：4 Pages

ROHM

罗姆

4 Channel DC/DC Converters IC with High-Efficiency Step-Up and Step-Down

文件：482.17 Kbytes 页数：19 Pages

RICHTEK

立锜科技

4 Channel DC/DC Converters IC with High-Efficiency Step-Up and Step-Down

文件：482.17 Kbytes 页数：19 Pages

RICHTEK

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4 Channel DC/DC Converters IC with High-Efficiency Step-Up and Step-Down

文件：482.17 Kbytes 页数：19 Pages

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4 Channel DC/DC Converters IC with High-Efficiency Step-Up and Step-Down

文件：514.409 Kbytes 页数：21 Pages

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4 Channel DC/DC Converters IC with High-Efficiency Step-Up and Step-Down

文件：514.409 Kbytes 页数：21 Pages

RICHTEK

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4 Channel DC/DC Converters IC with High-Efficiency Step-Up and Step-Down

文件：514.409 Kbytes 页数：21 Pages

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5 Channel DC/DC Converters IC with High-Efficiency Step-Up

文件：440.94 Kbytes 页数：15 Pages

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4 Channel DC/DC Converters IC with High-Efficiency Step-Up

文件：415.36 Kbytes 页数：15 Pages

RICHTEK

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