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RT9610CGQW

HighVoltageSynchronousRectifiedBuckMOSFETDriver

RichTekRichtek Technology Corporation

立锜科技立锜科技股份有限公司

SFP9610

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:-10μA(Max.)@VDS=-200V ■LowRDS(ON):2.084Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SFS9610

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=-200V ■LowRDS(ON):2.25Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SFWI9610

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SIHF9610

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheTO-220p

VishayVishay Siliconix

威世科技威世科技半导体

SiHF9610

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9610S

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •P-channel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半导体

SiHF9610S

AvailableinTapeandReel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprov

VishayVishay Siliconix

威世科技威世科技半导体

SIHFI9610G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SKU9610

ADAPTADORYAMAICHIDEENCAPSULADOPLCC28ADIP28PINES

Descripción ConectorhembradepruebaparaICdeYamaichi,paraencapsuladoPLCC28

AGELECTRONICA

AG Electronica

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