首页 >RT8206MGQW>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
23watt;MiniSpiralCompactFluorescent;2700K;82CRI;GU24base;120volts | SATCO Satco Products, Inc. | SATCO | ||
BATTERYPROTECTIONICFOR1-CELLPACK | SIISeiko Instruments Inc 精工爱普生精工爱普生株式会社 | SII | ||
BATTERYPROTECTIONICFOR1-CELLPACK(SECONDARYPROTECTION) | ABLICABLIC Inc. 艾普凌科艾普凌科有限公司 | ABLIC | ||
REMOTEFANCONTROLIC REMOTEFANCONTROLIC SC8206isahighperformanceelectronicfancontrollerLSI,Speedcontrol,off-timer,naturewind,sleepmodeareallbuiltintoasinglechip.Lightcontrol,buzzeroutput,keycontrolinput,aswellasremotecontroldecodingcircuitryareallprovidedtobuildafullfunc | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
Common-DrainDualN-ChannelEnhancementModeMOSFET | SYNC-POWERSYNC POWER Crop. 擎力科技擎力科技股份有限公司 | SYNC-POWER | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
MultistandardTVAudioProcessorandDigitalSoundDemodulator GeneralDescription Overview TheSTV82x6iscomposedofthreemainparts: 1.TVSoundDemodulator:providesallthenecessarycircuitryforthedemodulationofaudiotransmissionsofEuropeanandAsianterrestrialTVbroadcasts.Thevarioustransmissionstandardsareautomaticallydetectedand | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
DualN-Channel60V(D-S)175째CMOSFET FEATURES •TrenchFET®powerMOSFET •100RgandUIStested | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSII) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ●Smallfootprintduetosmallandthinpackage ●Lowdrain-sourceONresistance:RDS(ON)=40mΩ(typ.) ●Highforwardtransferadmittance:|Yfs|=7.0S(typ.) ●Lowleakagecurrent:IDSS=10µA(ma | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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