RT8075

Dual 1A, 1.25MHz Synchronous Step-Down Converter

GeneralDescription TheRT8075isahighefficiencyPulse-Width-Modulated(PWM)dualstep-downDC/DCconverter.Capableofdeliveringupto1Aoutputcurrentoverawideinputvoltagerangefrom2.5Vto5.5V,theRT8075isideallysuitedforportableelectronicdevicesthatarepoweredfrom1-c

RT8075ZQW

包装：卷带（TR） 封装/外壳：10-WFDFN 裸露焊盘 功能：降压 类别：集成电路（IC） 稳压器 - DC-DC 开关稳压器 描述：IC REG BUCK ADJ 1A DL 10WDFN

RT8075ZQW

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：10-WFDFN 裸露焊盘 功能：降压 类别：集成电路（IC） DC DC 开关稳压器 描述：IC REG BUCK ADJ 1A DL 10WDFN

8075

MagnetWire,#18SolBC,Polyester/Amide-imidePolymerIns

ProductDescription MagnetWire,18AWG(Solid)BareCopper,Polyester/Amide-imidePolymerInsulation,CLASS200MW35-C

AD8075

500MHz,G=-1and2TripleVideoBufferswithDisable

PRODUCTDESCRIPTION TheAD8074/AD8075arehigh-speedtriplevideobufferswithG=+1and+2respectively.Theyhavea–3dBfullsignalbandwidthinexcessof450MHz,alongwithslewratesinexcessof1400V/µs.Withbetterthan–80dBofallhostilecrosstalkand90dBisolation,theyareuse

AD8075

500MHz,G=1and2TripleVideoBufferswithDisable

PRODUCTDESCRIPTION TheAD8074/AD8075arehigh-speedtriplevideobufferswithG=+1and+2respectively.Theyhavea–3dBfullsignalbandwidthinexcessof450MHz,alongwithslewratesinexcessof1400V/µs.Withbetterthan–80dBofallhostilecrosstalkand90dBisolation,theyareuse

AD8075ARU

500MHz,G=-1and2TripleVideoBufferswithDisable

PRODUCTDESCRIPTION TheAD8074/AD8075arehigh-speedtriplevideobufferswithG=+1and+2respectively.Theyhavea–3dBfullsignalbandwidthinexcessof450MHz,alongwithslewratesinexcessof1400V/µs.Withbetterthan–80dBofallhostilecrosstalkand90dBisolation,theyareuse

AD8075ARUZ

500MHz,G=1and2TripleVideoBufferswithDisable

PRODUCTDESCRIPTION TheAD8074/AD8075arehigh-speedtriplevideobufferswithG=+1and+2respectively.Theyhavea–3dBfullsignalbandwidthinexcessof450MHz,alongwithslewratesinexcessof1400V/µs.Withbetterthan–80dBofallhostilecrosstalkand90dBisolation,theyareuse

AD8075ARUZ

500MHz,G=1and2TripleVideoBufferswithDisable

PRODUCTDESCRIPTION TheAD8074/AD8075arehigh-speedtriplevideobufferswithG=+1and+2respectively.Theyhavea–3dBfullsignalbandwidthinexcessof450MHz,alongwithslewratesinexcessof1400V/µs.Withbetterthan–80dBofallhostilecrosstalkand90dBisolation,theyareuse

AD8075ARUZ-REEL

500MHz,G=1and2TripleVideoBufferswithDisable

PRODUCTDESCRIPTION TheAD8074/AD8075arehigh-speedtriplevideobufferswithG=+1and+2respectively.Theyhavea–3dBfullsignalbandwidthinexcessof450MHz,alongwithslewratesinexcessof1400V/µs.Withbetterthan–80dBofallhostilecrosstalkand90dBisolation,theyareuse

AD8075-EVAL

500MHz,G=-1and2TripleVideoBufferswithDisable

PRODUCTDESCRIPTION TheAD8074/AD8075arehigh-speedtriplevideobufferswithG=+1and+2respectively.Theyhavea–3dBfullsignalbandwidthinexcessof450MHz,alongwithslewratesinexcessof1400V/µs.Withbetterthan–80dBofallhostilecrosstalkand90dBisolation,theyareuse

AD8075Z-EVAL

500MHz,G=1and2TripleVideoBufferswithDisable

PRODUCTDESCRIPTION TheAD8074/AD8075arehigh-speedtriplevideobufferswithG=+1and+2respectively.Theyhavea–3dBfullsignalbandwidthinexcessof450MHz,alongwithslewratesinexcessof1400V/µs.Withbetterthan–80dBofallhostilecrosstalkand90dBisolation,theyareuse

AOZ8075

6-LineEMIFilterwithIntegratedESDProtection

APT8075

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

APT8075

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

APT8075AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

APT8075BN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

APT8075BN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

APT8075BVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

APT8075BVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.