SiC SBD

RSS04065G是瑞森采用先进的碳化硅SBD技术制造的SiC 肖特基二极管，该产品拥有较强的抗浪涌冲击能力，优良的温度特性和开关特性。能提升方案性能效率，缩少空间减轻重量和零件数量，及增强系统可靠性。 IF(TC≤135℃)=6A \nVF(Typ)=1.4V\n175°C工作结温\n抗浪涌能力强\n良好的开关特性;

REASUNOS

瑞森半导体

Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

文件：361.15 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

文件：369.73 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

文件：563.02 Kbytes 页数：4 Pages

HUIXIN

慧芯电子