首页 >RSP015N10>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModePowerMOSFET Description TheGT015N10TLusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
N-ChannelEnhancementModePowerMOSFET Description TheGT015N10TLAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
MOSFET-Power,SingleN-Channel100V,12.2m,54A | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel100V,12.2m,47.1A | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel100V,12.9m,42A Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •PrimaryDC−DCMOSFET •SynchronousRectifierinDC−DCandAC−DC •MotorDrive •TheseDevicesarePb−Free,HalogenFree/BFRFreeandar | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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