600V 超结MOS

RSF60R099F是瑞森采用先进的超结工艺制造的N沟道多层外延超结场效应晶体管，通过优化芯片结构，使该产品具有极低的导通内阻和的栅极电荷，能较大地降低产品EMI和开关损耗。广泛应用于大功率开关电源,充电桩,矿机等领域。 VDS =600V,ID =31A\nRDS(ON) <99mΩ @ VGS = 10V\n超结工艺\n极低的导通电阻\n100%的UIS测试;

REASUNOS

瑞森半导体

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.099Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.84 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • High Peak Current Capability • FEATURES • Static drain-source on-resistance: RDS(on)≤99mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.05 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOS Power Transistor

Features • Worldwide best R ds,on in TO263 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies for

文件：324.07 Kbytes 页数：10 Pages

Infineon

英飞凌