丝印：R86300；Package：QFN-21；2.5V to 16V, 25A, High-Efficiency Half-Bridge Power-stage with Current and Temperature Sense in 3x4mm Package

Features •Wide 2.5V to 16V Operating Input Range •5V VDD supply for internal logic •Integrated power stage with High/Low-side MOSFETs and Drivers •50A Max, 25A TDC Output Current •Operation Frequency up to 3MHz with 5V VIN and 2MHz with 12V VIN. •Compatible with 3.3V tri-state PWM input •In

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2.5V to 16V, 25A, High-Efficiency Half-Bridge Power-stage with Current and Temperature Sense in 3x4mm Package

Features •Wide 2.5V to 16V Operating Input Range •5V VDD supply for internal logic •Integrated power stage with High/Low-side MOSFETs and Drivers •50A Max, 25A TDC Output Current •Operation Frequency up to 3MHz with 5V VIN and 2MHz with 12V VIN. •Compatible with 3.3V tri-state PWM input •In

文件：192.02 Kbytes 页数：2 Pages

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N-Channel PowerTrench짰 MOSFET 80 V, 42 A, 3.9 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switch

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DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

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N-Channel Dual CoolTM Power Trench짰 MOSFET 80 V, 60 A, 3.1 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：285.52 Kbytes 页数：8 Pages

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