SBS818

SchottkyBarrierDiode

SchottkyBarrierDiode30V,2A,LowVF,Non-MonolithicDualEMH8CommonCathode Features •Lowswitchingnoise •Lowforwardvoltage(IF=2.0A,VFmax=0.52V) •Ultrasmallpackagepermittingappliedsetstobesmallandslim(Mountingheight0.75mm) Applications •Highfrequencyrectification

SBS818

LowVFSchottkyBarrierDiode30V,2.0ARectifier

30V,2.0ARectifier Features •Smallswitchingnoise. •Lowforwardvoltage(IF=2.0A,VFmax=0.52V) •Ultrasmallpackagepermittingappliedsetstobesmallandslim(Mountingheight0.75mm). Applications •Highfrequencyrectification(switchingregulators,converters,choppers).

SDR818

100AMP50-1200VOLTS60nsecULTRAFASTRECTIFIER

SIE818DF

N-Channel75-V(D-S)MOSFET

SIE818DF

N-Channel75-V(D-S)MOSFET

SIR818DP

N-Channel30V(D-S)MOSFET

SIR818DP

N-Channel30V(D-S)MOSFET

STM818L/M

5Vsupervisorwithbatteryswitchover

STM818LSLASHM

5Vsupervisorwithbatteryswitchover

STT818A

HIGHGAINLOWVOLTAGEPNPPOWERTRANSISTOR

DESCRIPTION UsingthelatestlowvoltageEpitaxialPlanartechnologybasedoninterdigitatedlayout,STMicroelectronicshasintroducedthenew“HighGain”Powerbipolartransistorfamily,withoutstandingperformances.Itsverylowsaturationvoltagecombinedwiththe“highgain”characteristics