THN6501Z

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

THN6501Z

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

TM6501

RFAMPLIFIER

TM6501

RFAMPLIFIERMODEL

TMR6501

SingleChannelTMRMagneticPatternRecognitionSensor

FeaturesandBenefits Highsensitivityandexcellentgapperformances Outputvoltageisindependentofscanningspeed Differentialoutput,highCMRRperformance Singlechanneldetection,5mmdetectionwidth Compactsize:L10.5mmxW8mmxH9.6mm Simplestructureforlowcostso

TN6501

RFAMPLIFIERMODEL

TPC6501

TransistorSiliconNPNEpitaxialType

TPC6501

SiliconNPNEpitaxialType

TPC6501

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TSHA6501

InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs

Description TheTSHA650.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Incontras