丝印：H2A；Package：VS-6；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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Silicon NPN Epitaxial Type

文件：175.18 Kbytes 页数：5 Pages

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Transistor Silicon NPN Epitaxial Type

文件：148.62 Kbytes 页数：5 Pages

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Power transistor for high-speed switching applications

Polarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Collector Current IC 2 A \nCollector Current ICP 3.5 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 1.6 W \nCollector-emitter voltage VCEO 10 V ;

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Transistor Silicon NPN Epitaxial Type

文件：148.62 Kbytes 页数：5 Pages

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