RackStation RS3621xs

Highlights • High Performance Up to 238,273 random read IOPS and 5,819 MB/s sequential read performance1 • Powerful Compute Host multiple compute-intensive services with its 8-core Intel® processor • Upgradability Two PCIe expansion slots allow for M.2 NVMe cache adapters and high-bandwid

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SYNOLOGY

群晖科技

N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

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VBSEMI

微碧半导体

Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

文件：195.27 Kbytes 页数：11 Pages

SAMHOP

三合微科

1-Line, 36V EOS Protection

Features High ESD withstand Voltage: ±30kV (Contact) & ±30kV (Air) per IEC 61000-4-2 High peak pulse current capability: 24A (tp = 8/20μs), 1kV (tp = 1.2/50μs, RS = 42Ω ) per IEC 61000-4-5 Protects one I/O or power line Working voltage 36V Solid-state technology

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SEMTECH

先之科