首页 >RS20N60D>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
600VCoolMOSE6PowerTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
20AMP600Volts0.35ohmN-ChannelPowerMOSFET | SSDI Solid States Devices, Inc | SSDI | ||
20AMP/600Volts0.40ohmN-ChannelPowerMOSFET | SSDI Solid States Devices, Inc | SSDI | ||
20AMP/600Volts0.40ohmN-ChannelPowerMOSFET | SSDI Solid States Devices, Inc | SSDI | ||
20AMP/600Volts0.40ohmN-ChannelPowerMOSFET | SSDI Solid States Devices, Inc | SSDI | ||
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
FastS-IGBTinNPT-technology FastS-IGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistributio | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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