High Current Density Surface Mount Glass Passivated Fast Switching Rectifier

FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated pellet chip junction • Fast switching for high efficiency • Low thermal resistance • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q

文件：84.53 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount Glass Passivated Fast Switching Rectifier

FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated pellet chip junction • Fast switching for high efficiency • Low thermal resistance • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-

文件：99.06 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Glass Passivated Fast Switching Rectifier

文件：489.34 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount Glass Passivated Fast Switching Rectifier

Very low profile - typical height of 1.0 mm\nIdeal for automated placement\nGlass passivated pellet chip junction;

Vishay

威世

Package：DO-220AA；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 200V 1A DO220AA

Vishay General Semiconductor - Diodes Division

Package：DO-220AA；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 200V 1A DO220AA

Vishay General Semiconductor - Diodes Division

Package：DO-220AA；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 200V 1A DO220AA

Vishay General Semiconductor - Diodes Division