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BSO130N03MSG

OptiMOS??M-SeriesPower-MOSFET

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BSZ130N03LSG

OptiMOS??Power-MOSFET

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BSZ130N03MSG

OptiMOS??M-SeriesPower-MOSFET

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

PHB130N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=5V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHB130N03LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

PHB130N03LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

PHB130N03T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintend

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

PHP130N03LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

PHP130N03T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

RLW130N03

N-Channel30V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

供应商型号品牌批号封装库存备注价格
ROHM
24+
QFN
26200
原装现货,诚信经营!
询价
ROHM
09+
SOP8
5500
原装无铅,优势热卖
询价
ROHM
23+
N/A
19526
询价
ROHM
2016+
QFN
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
ROHM
24+
SOP
275
询价
ROHM
23+
SMD
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
ROHM
1741+
QFN
6528
只做进口原装正品假一赔十!
询价
ROHM
17+
SOP
9700
只做全新进口原装,现货库存
询价
FSC
23+
SOP8
20000
全新原装假一赔十
询价
ROHM
24+
PSOP8
2568
原装优势!绝对公司现货
询价
更多RQW130N03供应商 更新时间2025-5-19 14:08:00