RP1285C

包装：散装 类别：盒子，外壳，机架 箱 描述：BOX ABS GRY/CL 7.350\

RP1285C

包装：袋 类别：盒子，外壳，机架 箱 描述：BOX ABS GRY/CL 7.350\

SD1285

12.5VOLTS

SD1285

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASISD1285isDesignedforbroadbandoperationincommercialandamateurcommunicationequipmentupto30MHz. FEATURES: •PG=15dBmin.at20W/30MHz •IMD=-30dBcmax.at20W(PEP) •Omnigold™MetalizationSystem •EmitterBallasting

SD1285

RF&MICROWAVETRANSISTORSHFSSBAPPLICATIONS

DESCRIPTION TheSD1285isa12.5VepitaxialNPNplanartransistordesignedprimarilyforSSBcommunications.Thisdeviceutilizesemitterballastingtoachieveextremeruggednessundersevereoperatingconditions. ■30MHz ■12.5VOLTS ■COMMONEMITTER ■GOLDMETALLIZATION ■I

TA1285A

SAWFilter862MHz

TB1285A

SAWFilter184.32MHz25MHzBW(SMD7.0횞5.0mm)

THAR1285

ThroughHolePowerInductors

TPA1285

HighPrecision,HighVoltage,2chCurrentSenseAmplifier

Features ◼VOLTAGEOFFSET:±100uV(MAX) ◼WIDECOMMONMODEVOLTAGE:3.0Vto+76V ◼SUPPLYVOLTAGE:3.0Vto+5.5V ◼ACCURACYandZERO-DRIFTPERFORMANCE ◆±0.5%GainError(Maxovertemperature) ◆0.4μV/°COffsetDrift(Max,-40°C~125°C) ◆10ppm/°CGainDrift(Max) ◼THREEGAINOPTIONS

TPA1285F-VR-S

HighPrecision,HighVoltage,2chCurrentSenseAmplifier

Features ◼VOLTAGEOFFSET:±100uV(MAX) ◼WIDECOMMONMODEVOLTAGE:3.0Vto+76V ◼SUPPLYVOLTAGE:3.0Vto+5.5V ◼ACCURACYandZERO-DRIFTPERFORMANCE ◆±0.5%GainError(Maxovertemperature) ◆0.4μV/°COffsetDrift(Max,-40°C~125°C) ◆10ppm/°CGainDrift(Max) ◼THREEGAINOPTIONS