Package：轴向；包装：剪切带（CT）带盒（TB） 类别：电阻器 通孔式电阻器 描述：RES 200K OHM 5% 2W AXIAL

TE Connectivity Passive Product

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529

文件：297.65 Kbytes 页数：5 Pages

TOSHIBA

东芝

High Power Amplifier Application

文件：426.58 Kbytes 页数：5 Pages

TOSHIBA

东芝