TOSHIBA Transistor Silicon NPN쨌PNP Epitaxial Type

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of eve

文件：86.69 Kbytes 页数：4 Pages

TOSHIBA

东芝

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：NPN + PNP\nInternal Connection：2-in-1 (Point-symmetrical)\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current (Q1) IC 0.1 A \nCollector Current (Q2) IC -0.1 A \nCollector-emitter voltage (Q1) VCEO 50 V \nCollector-emitter voltage (Q2) VCEO -50 V ;

Toshiba

东芝

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine pitch small mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of e

文件：176.87 Kbytes 页数：7 Pages

TOSHIBA

东芝

6.8 ??390 VOLTS ZENER DIODES

FEATURES: • Hermetically Glass Sealed • High Power Dissipation 5W • Tight Voltage Tolerance 5 • For other Voltage, Power, or Tolerance Consult Factory. • TX, TXV, and S-Level Screening Available 5/. • Replacement for 1N4954 – 1N4996

文件：204.54 Kbytes 页数：3 Pages

SSDI

5 W 6.8 ??390 VOLTS ZENER DIODES

文件：204.54 Kbytes 页数：3 Pages

SSDI