| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RN4603 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Switching,InverterCircuit, InterfaceCircuitandDriverCircuit •IncludingtwodevicesinSM6(superminitypewith6leads) •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocessandminiaturize equipment. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | |
TO-3POWERTRANSISTORSOCKET | KEYSTONE Keystone Electronics Corp. | KEYSTONE | ||
7A竊?0VN-CHANNELMOSFET | KIAKIA Semiconductor Technology 可易亚半导体广东可易亚半导体科技有限公司 | KIA | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAO4603usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.StandardproductAO4603isPb-free(meetsROHS&Sony | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAO4603usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.StandardproductAO4603isPb-free(meetsROHS&Sony | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAON4603usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAON4603isPb-free(meetsROHS&Sony259specifications). | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
QL(AZ4)MicroLimitSwitch FEATURES 1.Subminiaturedesign Thesizeoftheactualunitisapproximately 1/10inthecaseoftheplunger modelandapproximately1/6.5inthe caseofthearmmodel,thatofthevertical typelimitswitch. Large-scaleminiaturizationhasbeen achieved.Idealforminiaturizedmachinery | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
SiliconLimiterDiodesandCeramicHermeticPackagedDevices Features Establishedlimiterdiodeprocess Highpower,mid-range,andcleanupdesigns Lowinsertionloss:0.1dB@10GHz Peakpowerhandlingto+74dBm Ultralowspikeleakagepower TightcontrolofIlayerbasewidth | SKYWORKSSkyworks Solutions Inc. 思佳讯美国思佳讯公司 | SKYWORKS | ||
LowVFandHighPowerDiode Description TheCTNS-4603Sisa300V,60A,fastrecoverydiode.ThemaximumVFof1.2Vandthemaximumtrrof100ns(IF:IRP=1:1)arerealizedbyoptimizingthetrade-offrelationshipbetweenVFandtrr.Thelowthermalresistancepackageachieveshighperformanceintermsofheatdissip | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
FastRecoveryandHighPowerDiode Features TheCTXS-4603Sisahighpowerandfastrecoverydiodewhichrealizeapeakreversevoltageof300V,atypicalforwardvoltagedropof1.05V(typ.)andtypicaltrr-timeof32ns(typ.)optimizingalife-timecontrol.Itsupportshigh-speedswitchingandreducesforward-loss. Thelowt | SankenSanken electric 三垦三垦电气株式会社 | Sanken |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-P/N+R
- 性质：
表面帖装型 （SMD）_RN2003+RN1003
- 封装形式：
贴片封装
- 极限工作电压：
- 最大电流允许值：
- 最大工作频率：
<1MHZ或未知
- 引脚数：
6
- 可代换的型号：
- 最大耗散功率：
- 放大倍数：
- 图片代号：
H-23
- vtest：
0
- htest：
999900
- atest：
0
- wtest：
0
详细参数
- 型号：
RN4603
- 制造商：
TOSHIBA
- 制造商全称：
Toshiba Semiconductor
- 功能描述：
TOSHIBA Transistor Silicon PNP Epitaxial Type(PCT Process) Silicon NPN Epitaxial Type(PCT Process)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
5000 |
公司存货 |
询价 | ||||
TOSHIBA |
2016+ |
SOT23-6 |
5000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
TOSHIBA |
2017+ |
SOT363 |
6528 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
原装TOSHI |
23+ |
SOT163 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
SOT-163 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
TOSHIBA |
21+ |
42664 |
12588 |
原装正品假一罚十 |
询价 | ||
TOSHIBA |
23+ |
SOT-163 |
63000 |
原装正品现货 |
询价 | ||
TOSHIBA |
24+ |
SOT363 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 | ||
TOSHIBA |
24+ |
SOT163 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
TOSHIBA |
17PB |
SOT23-6 |
3000 |
现货 |
询价 |
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