TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba offers transistors with a wide range

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Silicon PNP Epitaxial Type (PCT Process)Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：313.02 Kbytes 页数：6 Pages

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Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enables the manufacture of eve

文件：172.11 Kbytes 页数：6 Pages

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compac

文件：85.85 Kbytes 页数：4 Pages

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Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into a fine pitch small mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever mo

文件：169.35 Kbytes 页数：6 Pages

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Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：PNP×2\nInternal Connection：2-in-1 (Point-symmetrical)\nComplementary Product：RN1909AFS\nRoHS Compatible Product(s) (#)：Available Collector Current (Q1) IC -0.08 A \nCollector Current (Q2) IC -0.08 A \nCollector-emitter voltage (Q1) VCEO -50 V \nCollector-emitter voltage (Q2) VCEO -50 V ;

Toshiba

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Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：PNP×2\nInternal Connection：2-in-1 (Point-symmetrical)\nComplementary Product：RN1909FE\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current (Q1) IC -0.1 A \nCollector Current (Q2) IC -0.1 A \nCollector-emitter voltage (Q1) VCEO -50 V \nCollector-emitter voltage (Q2) VCEO -50 V ;

Toshiba

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Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：PNP×2\nInternal Connection：2-in-1 (Point-symmetrical)\nComplementary Product：RN1909FS\nRoHS Compatible Product(s) (#)：Available Collector Current (Q1) IC -0.05 A \nCollector Current (Q2) IC -0.05 A \nCollector-emitter voltage (Q1) VCEO -20 V \nCollector-emitter voltage (Q2) VCEO -20 V ;

Toshiba

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