TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications ● With built-in bias resistors ● Simplified circuit design ● Reduced number of parts and simplified manufacturing process ● Complementary to RN2414 to RN2418

文件：272.41 Kbytes 页数：8 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：184.11 Kbytes 页数：8 Pages

TOSHIBA

东芝

Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：NPN\nInternal Connection：Single\nComplementary Product：RN2415\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC 0.1 A \nCollector-emitter voltage VCEO 50 V ;

Toshiba

东芝

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V 0.1A SMINI

Toshiba Semiconductor and Storage

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V 0.1A SMINI

Toshiba Semiconductor and Storage

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：AUTO AEC-Q TR NPN Q1BSR=2.2KOHM,

Toshiba Semiconductor and Storage