TGA1307

KaBandLowNoiseAmplifier

KeyFeaturesandPerformance •0.25umpHEMTTechnology •23-29GHzFrequencyRange •3.1dBNominalNoiseFigure28GHz •17dBNominalGain •OTOI>22dBm •5V,50mASelf-Bias PrimaryApplications •Point-to-PointRadio •Point-to-MultipointCommunications

TGA1307-EPU

KaBandLowNoiseAmplifier

KeyFeaturesandPerformance •0.25umpHEMTTechnology •23-29GHzFrequencyRange •3.1dBNominalNoiseFigure28GHz •17dBNominalGain •OTOI>22dBm •5V,50mASelf-Bias PrimaryApplications •Point-to-PointRadio •Point-to-MultipointCommunications

TZ1307A

HC49USDIP17.664MHzCrystalUnit

Features: SurfaceMountSeamWeldPackage GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49UScrystalunitforuseinwirelesstelecommunicationsdevices

VB1307N

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

VBA1307

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

VBA1307A

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

VBC1307

N-Channel30V(D-S)MOSFET

FEATURES •TrenchFETPowerMOSFET •100%RgTested •100%UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •NotebookSystemPower •LowCurrentDC/DC

VBE1307

N-Channel30-V(D-S)MOSFET

VBE1307

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC

VBE1307A

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC