RN1132MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

SwitchingApplications InverterCircuitApplications InterfaceCircuitApplications DriverCircuitApplications Ultra-smallpackage,suitedtoveryhighdensitymounting Incorporatingabiasresistorintothetransistorreducesthenumberofparts,so enablingthemanufactureofevermor

RN1132MFV,L3F

Package：SOT-723；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V 0.1A VESM

Toshiba Semiconductor and Storage

S1132

HIGHRIPPLE-REJECTIONANDLOWDROPOUT

S-1132

HIGHRIPPLE-REJECTIONANDLOWDROPOUTMIDDLEOUTPUTCURRENTCMOSVOLTAGEREGULATOR

S-1132

HIGHRIPPLE-REJECTIONLOWDROPOUTMIDDLEOUTPUTCURRENTCMOSVOLTAGEREGULATOR

HIGHRIPPLE-REJECTIONLOWDROPOUTMIDDLEOUTPUTCURRENTCMOSVOLTAGEREGULATOR S-1132Series TheS-1132Seriesisapositivevoltageregulatorwithalowdropoutvoltage,highoutputvoltageaccuracy,andlowcurrentconsumption(300mAoutputcurrent)developedbasedonCMOStechnology.A

SC1132CT

COMBINATIONSWITCHINGCONTROLLERANDLOWDROPOUTREGULATOR

SC1132CT-XY

COMBINATIONSWITCHINGCONTROLLERANDLOWDROPOUTREGULATOR

SI1132

Integratedambientlightsensor

SID1132KQ

Upto8ASingleChannelIGBT/MOSFETGateDriverAutomotiveApplicationsProvidingReinforcedGalvanicIsolation

Applications •Electricvehiclepowertrain •Electricvehicleon-boardchargersandchargerstations •Highreliabilitydriversandinverters Description TheSID11x2KQisasinglechannelIGBTandMOSFETdriverinan eSOPpackage.ReinforcedgalvanicisolationisprovidedbyPower Integrat

SLD1132VS

635nmRedLaserDiode

Description TheSLD1132VSisaredlaserdiodedesignedforlaserpointers.Itswavelength(635nmtyp.)isshortenedby35nmandvisibilityisincreasedbyapproximately7times,comparedtotheconventionalvisiblelaserdiode(670nmtyp.). Features •Shortwavelength(635nmtyp.) •Smallpac