首页 >RN-1723-EK>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HVstart-upflybackcontrollerwithintegratedMOSFETfor11Wapplications,430Hzburstfrequency | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
HVstart-upflybackcontrollerwithintegratedMOSFETfor11Wapplications,905Hzburstfrequency | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
HVstart-upflybackcontrollerwithintegratedMOSFETfor11Wapplications,1270Hzburstfrequency | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
HVstart-upflybackcontrollerwithintegratedMOSFETfor11Wapplications,1750Hzburstfrequency | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
LCDDrivercontrolcircuit | PTHShenzhen Putianhe Technology Co., Ltd 普天和深圳市普天和科技公司 | PTH | ||
CrystalUnitSMD5.0x3.212.0MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount5.0mmx3.2mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
2A,18V,High-EfficiencySynchronous-RectifiedBuckConverter | UPI uPI Semiconductor Corp | UPI | ||
2A,18V,High-EfficiencySynchronous-RectifiedBuckConverter | UPI uPI Semiconductor Corp | UPI | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheµPA1723isN-ChannelMOSFieldEffectTransistordesignedforpowermanagementswitch. FEATURES •Lowon-stateresistance RDS(on)1=6.7mΩMAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4mΩMAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7mΩMAX.(VGS=2.5V,ID=7. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR FEATURES •Lowon-stateresistance RDS(on)1=6.7mΩMAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4mΩMAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7mΩMAX.(VGS=2.5V,ID=7.0A) •LowCiss:Ciss=3800pFTYP. •Built-inG-Sprotectiondiode •Smallandsurfacemountpackage(PowerSOP | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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