36-Mbit QDR™ II SRAM 2-word Burst

Description The RMQS2A3636DGBA is a 1,048,576-word by 36-bit and the RMQS2A3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

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36-Mbit QDR??II SRAM 2-word Burst

文件：888.07 Kbytes 页数：30 Pages

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36-Mbit QDR??II SRAM 2-word Burst

文件：888.07 Kbytes 页数：30 Pages

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瑞萨

36-Mbit QDR??II SRAM 2-word Burst

文件：888.07 Kbytes 页数：30 Pages

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36-Mbit QDR™ II SRAM 2-word Burst

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36-Mbit QDR™ II SRAM　2-word Burst

The RMQS2A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS2A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst count • Power Supply 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)\n• I/O Separate independent read and write data ports with concurrent transactions 100% bus utilization DDR read and write operation HSTL I/O User programmable output impedance PLL circuitry for wide output data valid window and fu;

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Memory

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