首页 >RMQS2A1818DGBA>规格书列表
零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
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RMQS2A1818DGBA | 18-Mbit QDR™ II SRAM 2-word Burst Description TheRMQS2A1836DGBAisa524,288-wordby36-bitandtheRMQS2A1818DGBAisa1,048,576-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryanda | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | |
18-Mbit QDR™ II SRAM 2-word Burst; • Power Supply 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)\n• Clock Fast clock cycle time for high bandwidth Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems Clock-stop capability with μs restart\n• I/O Separate independent read and write data ports with concurrent transactions 100% bus utilization DDR read and write operation HSTL I/O User programmable output impedance PLL circuitry for wide output data valid window and future frequency scaling\n• Function Two-tick burst for low DDR transaction size Internally self-timed write control Simple control logic for easy depth expansion JTAG 1149.1 compatible test access port\n• Package 165 FBGA package (13 x 15 x 1.4 mm)\n; The RMQS2A1836DGBA is a 524, 288-word by 36-bit and the RMQS2A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package. | RenesasRenesas Technology Corp 瑞萨瑞萨科技有限公司 | Renesas | ||
18-Mbit QDR??II SRAM 2-word Burst | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
18-Mbit QDR??II SRAM 2-word Burst | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
18-Mbit QDR??II SRAM 2-word Burst | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
技术参数
- Density (Kb):
18000
- Data Width (bits):
18000
- Burst Length (Words):
2
- Read Latency (Clock):
1.5
- MIN Frequency (MHz):
120
- Frequency (Max) (MHz):
300
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS |
1923+ |
NA |
6900 |
只做进口原装假一罚十品质决定一切价格优惠 |
询价 | ||
RENESAS/瑞萨 |
21+ |
BGA |
1574 |
询价 | |||
RENESAS/瑞萨 |
24+ |
BGA |
145 |
原装现货 |
询价 | ||
DBLECTRO |
23+ |
原厂原包 |
29960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
亚成微 |
23+ |
TOLL |
7500 |
亚成微全系列在售 |
询价 | ||
TOS |
24+ |
SOT-123 |
9000 |
询价 | |||
reso |
420 |
公司优势库存 热卖中! |
询价 |
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