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RMQS2A1818DGBA

18-Mbit QDR™ II SRAM 2-word Burst

Description TheRMQS2A1836DGBAisa524,288-wordby36-bitandtheRMQS2A1818DGBAisa1,048,576-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryanda

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQS2A1818DGBA-332

18-Mbit QDR™ II SRAM 2-word Burst; • Power Supply 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)\n• Clock Fast clock cycle time for high bandwidth Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems Clock-stop capability with μs restart\n• I/O Separate independent read and write data ports with concurrent transactions 100% bus utilization DDR read and write operation HSTL I/O User programmable output impedance PLL circuitry for wide output data valid window and future frequency scaling\n• Function Two-tick burst for low DDR transaction size Internally self-timed write control Simple control logic for easy depth expansion JTAG 1149.1 compatible test access port\n• Package 165 FBGA package (13 x 15 x 1.4 mm)\n;

The RMQS2A1836DGBA is a 524, 288-word by 36-bit and the RMQS2A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.

RenesasRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQS2A1818DGBA-302#AC0

18-Mbit QDR??II SRAM 2-word Burst

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQS2A1818DGBA-302#AC0

18-Mbit QDR??II SRAM 2-word Burst

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQS2A1818DGBA-332#AC0

18-Mbit QDR??II SRAM 2-word Burst

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

技术参数

  • Density (Kb):

    18000

  • Data Width (bits):

    18000

  • Burst Length (Words):

    2

  • Read Latency (Clock):

    1.5

  • MIN Frequency (MHz):

    120

  • Frequency (Max) (MHz):

    300

供应商型号品牌批号封装库存备注价格
RENESAS
1923+
NA
6900
只做进口原装假一罚十品质决定一切价格优惠
询价
RENESAS/瑞萨
21+
BGA
1574
询价
RENESAS/瑞萨
24+
BGA
145
原装现货
询价
DBLECTRO
23+
原厂原包
29960
只做进口原装 终端工厂免费送样
询价
亚成微
23+
TOLL
7500
亚成微全系列在售
询价
TOS
24+
SOT-123
9000
询价
reso
420
公司优势库存 热卖中!
询价
更多RMQS2A1818DGBA供应商 更新时间2025-7-29 14:31:00