18-Mbit QDR™ II SRAM 2-word Burst

Description The RMQS2A1836DGBA is a 524,288-word by 36-bit and the RMQS2A1818DGBA is a 1,048,576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a

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18-Mbit QDR??II SRAM 2-word Burst

文件：850.58 Kbytes 页数：30 Pages

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18-Mbit QDR??II SRAM 2-word Burst

文件：850.58 Kbytes 页数：30 Pages

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瑞萨

18-Mbit QDR??II SRAM 2-word Burst

文件：850.58 Kbytes 页数：30 Pages

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18-Mbit QDR™ II SRAM 2-word Burst

The RMQS2A1836DGBA is a 524, 288-word by 36-bit and the RMQS2A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. • Power Supply 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)\n• Clock Fast clock cycle time for high bandwidth Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches Two output ec;

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Memory

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